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HAT2204C Datasheet(PDF) 1 Page - Renesas Technology Corp |
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HAT2204C Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page R07DS1180EJ0600 Rev.6.00 Page 1 of 6 Mar 19, 2014 Data Sheet HAT2204C Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 26m Ω typ.(at V GS = 4.5 V) • Low drive current • High density mounting • 1.8 V gate drive device Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK - 6) 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate 1 2 3 6 5 4 G D S 6 1 5 D 2 D 3 D 4 Index band Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to Source voltage VDSS 12 V Gate to Source voltage VGSS ±8 V Drain current ID 3.5 A Drain peak current ID (pulse) Note1 14 A Body - Drain diode reverse Drain current IDR 3.5 A Channel dissipation Pch Note2 900 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 x 40 x 1.6mm) R07DS1180EJ0600 (Previous: REJ03G0448-0500) Rev.6.00 Mar 19, 2014 |
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