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HAF2012L Datasheet(PDF) 2 Page - Renesas Technology Corp |
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HAF2012L Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 10 page HAF2012(L), HAF2012(S) REJ03G1139-0400 Rev.4.00 Jul 13, 2007 Page 2 of 9 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value Unit Drain to source voltage VDSS 60 V VGSS 16 V Gate to source voltage VGSS –2.8 V Drain current ID 20 A Drain peak current ID (pulse) Note 1 40 A Body-drain diode reverse drain current IDR 20 A Channel dissipation Pch Note 2 50 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Ta = 25 °C Typical Operation Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions VIH 3.5 — — V Input voltage VIL — — 1.2 V IIH1 — — 100 µA Vi = 8 V, VDS = 0 IIH2 — — 50 µA Vi = 3.5 V, VDS = 0 Input current (Gate non shut down) IIL — — 1 µA Vi = 1.2 V, VDS = 0 IIH (sd) 1 — 0.8 — mA Vi = 8 V, VDS = 0 Input current (Gate shut down) IIH (sd) 2 — 0.35 — mA Vi = 3.5 V, VDS = 0 Shut down temperature Tsd — 175 — °C Channel temperature Gate operation voltage VOP 3.5 — 13 V |
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