GSMBTA44 datasheet(1/2 Pages) GTM

Part #	GSMBTA44

Description	NPN EPITAXIAL PLANAR TRANSISTOR

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Manufacturer	GTM [GTM CORPORATION]

Direct Link	http://www.gtm.com.tw

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GSMBTA44

Page: 1/2

ISSUED DATE :2005/08/31

REVISED DATE :

G

G S

S M

M B

B T

TA

A4444

N

N P

P N

N E

E P

P II T

T A

A X

X II A

A L

L P

P L

L A

A N

N A

A R

R T

T R

R A

A N

N S

S II S

S T

T O

O R

R

Description

The GSMBTA44 is designed for application requires high voltage.

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

0.80

1.10

L1

0.42 REF.

A1

0

0.10

L

0.15

0.35

A2

0.80

1.00

b

0.25

0.40

D

1.80

2.20

c

0.10

0.25

E

1.15

1.35

e

0.65 REF.

HE

1.80

2.40

Q1

0.15 BSC.

Absolute Maximum Ratings at Ta = 25 ::::

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+150

Storage Temperature

Tstg

-55~+150

Collector to Base Voltage

VCBO

500

V

Collector to Emitter Voltage

VCEO

400

V

Emitter to Base Voltage

VEBO

6

V

Collector Current

IC

300

mA

Total Power Dissipation

PD

350

mW

Electrical Characteristics(Ta = 25 : ,unless otherwise noted)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

500

-

V

IC=100uA, IE=0

BVCEO

400

-

V

IC=1mA, IB=0

BVEBO

6

-

V

IE=10uA, IC=0

ICBO

-

100

nA

VCB=400V, IE=0

IEBO

-

100

nA

VEB=4V, IC=0

ICES

-

500

nA

VCE=400V, IB=0

*VCE(sat)1

-

375

mV

IC=20mA, IB=2mA

*VCE(sat)2

-

750

mV

IC=50mA, IB=5mA

*VBE(sat)

-

750

mV

IC=10mA, IB=1mA

*hFE1

40

-

VCE=10V, IC=1mA

*hFE2

40

-

VCE=10V, IC=10mA

*hFE3

45

-

VCE=10V, IC=50mA

*hFE4

40

-

VCE=10V, IC=100mA

Cob

-

4

6

pF

VCB=20V, IE=0, f=1MHz

* Pulse Test: Pulse Width 380 s, Duty Cycle 2%

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