11
High Speed GaAlAs Infrared Emitter
OPE5985
The OPE5985 is GaAlAs infrared emitting diode
DIMENSIONS(Unit : mm)
that is designed for high power, low forward
voltage and high speed rise / fall time.
This device is optimized for speed and efficiency
at emission wavelength 850nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1 package
and has wide beam angle with lensed package
and cup frame. Especially this device is suited
as the emitter of data transmission without cable.
FEATURES
• High speed : 25ns rise time
• 850nm wavelength
• Wide beam angle
• Low forward voltage
• High power and high reliability
• Available for pulse operating
APPLICATIONS
• Emitter of IrDA
• IR Audio and Telephone
• High speed IR communication
• IR LANs
• Available for wireless digital data transmission
STORAGE
• Condition : 5°C~35°C,R.H.60%
• Terms : within 3 months from production date
• Remark : Once the package is opened, the products should be used within a day.
Otherwise, it should be keeping in a damp proof box with desiccants.
* Please take proper steps in order to secure reliability and safety in required conditions
and environments for this device.
MAXIMUM RATINGS
(Ta=25
)
Item
Symbol
Rating
Unit
Power Dissipation
PDC
80
C
Forward current
IFC
60
EC
Pulse forward current
CCCCCC
IFPC
0.5
A
C
Reverse voltage
VRC
5.0
C
Operating temp.
Topr.
-20~ +70
°CC
Soldering temp. CCCCCCCCCCCCCCC 2
Tsol.
240.
°CC
1.Duty ratio = 1/100, pulse width=0.1ms.
2.Lead Soldering Temperature (2mm from case for 5sec.).
ELECTRO-OPTICAL CHARACTERISTICS
(Ta=25
)
Item
Symbol
Conditions
Min.
Typ.
Max.
Unit
Forward voltage
VF
C
IF=50
EC
1.5
2.0
V
Reverse current
IR
C
VR=5V
CC
C
10
µEC
Capacitance
Ct
f=1
CC
20
C
EC
15
~
DDC
B Rank
40
~
C
Radiant intensity
Ie
IF=50
E
C Rank
55
~
C
/
Peak emission wavelength
p
C
IF=50
EC
C
850
C
C
Spectral bandwidth 50%
C
IF=50
C
C
45
C
C
Half angle
IF=40
C
C
±25
C
deg.
Optical rise & fall time(10%~90%)
tr/tf
IF=50
C
C
25/13
C
ns
Cut off frequency
*3
fc
IF
D ECEEC
DD EC
C
C
14
C
MHz
*3. 10logPo(fc MHz)/Po(0.1 MHz)=-3
Anode
Cathode
2.5
2- 0.5
3.0
Tolerance :
±0.2mm
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