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IRG4BC20MDS Datasheet(PDF) 2 Page - International Rectifier |
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IRG4BC20MDS Datasheet(HTML) 2 Page - International Rectifier |
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2 / 12 page  IRG4BC20MD-SPbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ---- ---- V VGE = 0V, IC = 250µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---- 0.67 ---- V/°C VGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage ---- 1.85 2.1 IC = 11A VGE = 15V ---- 2.46 ---- V IC = 18A See Fig. 2, 5 ---- 2.07 ---- IC = 11A, TJ = 150°C VGE(th) Gate Threshold Voltage 4.0 ---- 6.5 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---- -11 ---- mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance 3.0 3.6 ---- S VCE = 100V, IC = 11A ICES Zero Gate Voltage Collector Current ---- ---- 250 µA VGE = 0V, VCE = 600V ---- ---- 2500 VGE = 0V, VCE = 600V, TJ = 150°C VFM Diode Forward Voltage Drop ---- 1.4 1.7 V IC = 8.0A See Fig. 13 ---- 1.3 1.6 IC = 8.0A, TJ = 150°C IGES Gate-to-Emitter Leakage Current ---- ---- ±100 nA VGE = ±20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) ---- 39 59 IC = 11A Qge Gate - Emitter Charge (turn-on) ---- 5.3 8.0 nC VCC = 400V See Fig. 8 Qgc Gate - Collector Charge (turn-on) ---- 20 30 VGE = 15V td(on) Turn-On Delay Time ---- 21 ---- TJ = 25°C tr Rise Time ---- 37 ---- ns IC = 11A, VCC = 480V td(off) Turn-Off Delay Time ---- 463 690 VGE = 15V, RG = 50Ω tf Fall Time ---- 340 510 Energy losses include "tail" and Eon Turn-On Switching Loss ---- 0.41 ---- diode reverse recovery. Eoff Turn-Off Switching Loss ---- 2.03 ---- mJ See Fig. 9, 10, 11, 18 Ets Total Switching Loss ---- 2.44 3.7 td(on) Turn-On Delay Time ---- 19 ---- TJ = 150°C, See Fig. 9, 10, 11, 18 tr Rise Time ---- 41 ---- ns IC = 6.5A, VCC = 480V td(off) Turn-Off Delay Time ---- 590 ---- VGE = 15V, RG = 50Ω tf Fall Time ---- 600 ---- Energy losses include "tail" and Ets Total Switching Loss ---- 3.49 ---- mJ diode reverse recovery. LE Internal Emitter Inductance ---- 7.5 ---- nH Measured 5mm from package Cies Input Capacitance ---- 460 ---- VGE = 0V Coes Output Capacitance ---- 54 ---- pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance ---- 14 ---- ƒ = 1.0MHz trr Diode Reverse Recovery Time ---- 37 55 ns TJ = 25°C See Fig. ---- 55 90 TJ = 125°C 14 IF = 8.0A Irr Diode Peak Reverse Recovery Current ---- 3.5 5.0 A TJ = 25°C See Fig. ---- 4.5 8.0 TJ = 125°C 15 VR = 200V Qrr Diode Reverse Recovery Charge ---- 65 138 nC TJ = 25°C See Fig. ---- 124 360 TJ = 125°C 16 di/dt 200A/µs di(rec)M/dt Diode Peak Rate of Fall of Recovery ---- 240 ---- A/µs TJ = 25°C See Fig. During tb ---- 210 ---- TJ = 125°C 17 Switching Characteristics @ TJ = 25°C (unless otherwise specified) |
Similar Part No. - IRG4BC20MDS_07 |
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Similar Description - IRG4BC20MDS_07 |
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