NTD5P06V datasheet(2/8 Pages) ONSEMI

Part #	NTD5P06V

Description	Power MOSFET 5 Amps, 60 Volts P?묬hannel DPAK

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MTD5P06V

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

60

−

61.2

−

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)

(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)

IDSS

−

10

100

µAdc

Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)

IGSS

−

100

nAdc

ON CHARACTERISTICS (Note 3.)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

2.0

−

2.8

4.7

4.0

−

Vdc

mV/

°C

Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 2.5 Adc)

RDS(on)

−

0.34

0.45

Ohm

Drain−Source On−Voltage

(VGS = 10 Vdc, ID = 5 Adc)

(VGS = 10 Vdc, ID = 2.5 Adc, TJ = 150°C)

VDS(on)

−

2.7

2.6

Vdc

Forward Transconductance

(VDS = 15 Vdc, ID = 2.5 Adc)

gFS

1.5

3.6

−

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

25 Vd

V

0Vd

Ciss

−

367

510

pF

Output Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

−

140

200

Transfer Capacitance

f = 1.0 MHz)

Crss

−

29

60

SWITCHING CHARACTERISTICS (Note 4.)

Turn−On Delay Time

td(on)

−

11

20

ns

Rise Time

(VDD = 30 Vdc, ID = 5 Adc,

VGS =10Vdc

tr

−

26

50

Turn−Off Delay Time

VGS = 10 Vdc,

RG = 9.1 Ω)

td(off)

−

17

30

Fall Time

RG

9.1

Ω)

tf

−

19

40

Gate Charge

(S

Fi

8)

QT

−

12

20

nC

(See Figure 8)

(VDS = 48 Vdc, ID = 5 Adc,

Q1

−

3.0

−

(VDS

48 Vdc, ID

5 Adc,

VGS = 10 Vdc)

Q2

−

5.0

−

Q3

−

5.0

−

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(IS = 5 Adc, VGS = 0 Vdc)

(IS = 5 Adc, VGS = 0 Vdc, TJ = 150°C)

VSD

−

1.72

1.34

3.5

−

Vdc

Reverse Recovery Time

trr

−

97

−

ns

(I

5 Adc V

0 Vdc

ta

−

73

−

(IS = 5 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

tb

−

24

−

Reverse Recovery Stored

Charge

dIS/dt = 100 A/µs)

QRR

−

0.42

−

µC

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25

″ from package to center of die)

LD

−

4.5

−

nH

Internal Source Inductance

(Measured from the source lead 0.25

″ from package to source bond pad)

LS

−

7.5

−

nH

3. Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperature.

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