NTHD3101FT1G datasheet(1/7 Pages) ONSEMI

Part #	NTHD3101FT1G

Description	Power MOSFET and Schottky Diode

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Manufacturer	ONSEMI [ON Semiconductor]

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March, 2006 − Rev. 3

1

Publication Order Number:

NTHD3101F/D

NTHD3101F

Power MOSFET and

Schottky Diode

−20 V, FETKYt, P−Channel, −4.4 A, with

4.1 A Schottky Barrier Diode, ChipFETt

Features

• Leadless SMD Package Featuring a MOSFET and Schottky Diode

• 40% Smaller than TSOP−6 Package

• Leadless SMD Package Provides Great Thermal Characteristics

• Independent Pinout to each Device to Ease Circuit Design

• Trench P−Channel for Low On Resistance

• Ultra Low VF Schottky

• Pb−Free Packages are Available

Applications

• Li−Ion Battery Charging

• High Side DC−DC Conversion Circuits

• High Side Drive for Small Brushless DC Motors

• Power Management in Portable, Battery Powered Products

MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Value

Units

Drain−to−Source Voltage

VDSS

−20

V

Gate−to−Source Voltage

VGS

±8.0

V

Continuous Drain

Current (Note 1)

Steady

State

TJ = 25°C

ID

−3.2

A

TJ = 85°C

−2.3

t ≤ 5 s

TJ = 25°C

−4.4

Power Dissipation

(Note 1)

Steady

State

TJ = 25°C

PD

1.1

W

t ≤ 5 s

2.1

Pulsed Drain Current

tp = 10 ms

IDM

−13

A

Operating Junction and Storage Temperature TJ, TSTG

−55 to

150

°C

Source Current (Body Diode)

IS

2.5

A

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

TL

260

°C

SCHOTTKY DIODE MAXIMUM RATINGS

(TJ = 25°C unless otherwise noted)

Parameter

Symbol

Value

Units

Peak Repetitive Reverse Voltage

VRRM

20

V

DC Blocking Voltage

VR

20

V

Average Rectified

Forward Current

Steady

State

TJ = 25°C

IF

2.2

V

t ≤ 5 s

4.1

A

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq

[1 oz] including traces).

http://onsemi.com

G

D

P−Channel MOSFET

S

C

A

Schottky Diode

−20 V

20 V

85 mW @ −2.5 V

64 mW @ −4.5 V

4.1 A

RDS(on) TYP

−4.4 A

0.510 V

ID MAX

V(BR)DSS

MOSFET

SCHOTTKY DIODE

VR MAX

IF MAX

VF TYP

ChipFET

CASE 1206A

STYLE 3

1

8

CONNECTIONS

MARKING

DIAGRAM

1

2

3

4

8

7

6

5

8

7

6

5

4

3

2

1

C

D

A

S

G

D1 = Specific Device Code

M

= Month Code

G

= Pb−Free Package

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

ORDERING INFORMATION

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