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NTHD3101FT1G Datasheet(PDF) 1 Page - ON Semiconductor |
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NTHD3101FT1G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 7 page © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 3 1 Publication Order Number: NTHD3101F/D NTHD3101F Power MOSFET and Schottky Diode −20 V, FETKYt, P−Channel, −4.4 A, with 4.1 A Schottky Barrier Diode, ChipFETt Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package • Leadless SMD Package Provides Great Thermal Characteristics • Independent Pinout to each Device to Ease Circuit Design • Trench P−Channel for Low On Resistance • Ultra Low VF Schottky • Pb−Free Packages are Available Applications • Li−Ion Battery Charging • High Side DC−DC Conversion Circuits • High Side Drive for Small Brushless DC Motors • Power Management in Portable, Battery Powered Products MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Units Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage VGS ±8.0 V Continuous Drain Current (Note 1) Steady State TJ = 25°C ID −3.2 A TJ = 85°C −2.3 t ≤ 5 s TJ = 25°C −4.4 Power Dissipation (Note 1) Steady State TJ = 25°C PD 1.1 W t ≤ 5 s 2.1 Pulsed Drain Current tp = 10 ms IDM −13 A Operating Junction and Storage Temperature TJ, TSTG −55 to 150 °C Source Current (Body Diode) IS 2.5 A Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C SCHOTTKY DIODE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Units Peak Repetitive Reverse Voltage VRRM 20 V DC Blocking Voltage VR 20 V Average Rectified Forward Current Steady State TJ = 25°C IF 2.2 V t ≤ 5 s 4.1 A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). http://onsemi.com G D P−Channel MOSFET S C A Schottky Diode −20 V 20 V 85 mW @ −2.5 V 64 mW @ −4.5 V 4.1 A RDS(on) TYP −4.4 A 0.510 V ID MAX V(BR)DSS MOSFET SCHOTTKY DIODE VR MAX IF MAX VF TYP ChipFET CASE 1206A STYLE 3 1 8 PIN CONNECTIONS MARKING DIAGRAM 1 2 3 4 8 7 6 5 8 7 6 5 4 3 2 1 C C D D A A S G D1 = Specific Device Code M = Month Code G = Pb−Free Package See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. ORDERING INFORMATION |
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