RJK4013DPE datasheet(2/4 Pages) RENESAS

Part #	RJK4013DPE

Description	Silicon N Channel MOS FET High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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2 / 4 page

RJK4013DPE

Rev.1.00 Feb 02, 2007 page 2 of 3

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Drain to source breakdown voltage

V(BR)DSS

400

—

V

ID = 10 mA, VGS = 0

Zero gate voltage drain current

IDSS

—

1

µA

VDS = 400 V, VGS = 0

Gate to source leak current

IGSS

—

±0.1

µA

VGS =

±30 V, VDS = 0

Gate to source cutoff voltage

VGS(off)

3.0

—

4.5

V

VDS = 10 V, ID = 1 mA

Static drain to source on state

resistance

RDS(on)

—

0.25

0.30

Ω

ID = 8.5 A, VGS = 10 V

Note4

Input capacitance

Ciss

—

1450

—

pF

Output capacitance

Coss

—

175

—

pF

Reverse transfer capacitance

Crss

—

21

—

pF

VDS = 25 V

VGS = 0

f = 1 MHz

Turn-on delay time

td(on)

—

33

—

ns

Rise time

tr

—

28

—

ns

Turn-off delay time

td(off)

—

84

—

ns

Fall time

tf

—

15

—

ns

ID = 8.5 A

VGS = 10 V

RL = 23.5

Ω

Rg = 10

Ω

Total gate charge

Qg

—

38

—

nC

Gate to source charge

Qgs

—

8

—

nC

Gate to drain charge

Qgd

—

17

—

nC

VDD = 320 V

VGS = 10 V

ID = 17 A

Body-drain diode forward voltage

VDF

—

0.9

1.5

V

IF = 17 A, VGS = 0

Note4

Body-drain diode reverse recovery time

trr

—

260

—

ns

IF = 17 A, VGS = 0

diF/dt = 100 A/

µs

Notes: 4. Pulse test

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