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RJK6014DPP Datasheet(PDF) 1 Page - Renesas Technology Corp

Part No. RJK6014DPP
Description  Silicon N Channel MOS FET High Speed Power Switching
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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REJ03G1531-0100 Rev.1.00 Apr 17, 2007
Page 1 of 3
RJK6014DPP
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1531-0100
Rev.1.00
Apr 17, 2007
Features
• Low on-resistance
• Low leakage current
• High speed switching
Outline
RENESAS Package code: PRSS0003AB-A
(Package name: TO-220FN)
1
2
3
D
S
G
1. Gate
2. Drain
3. Source
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
600
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
Note4
16
A
Drain peak current
ID (pulse)
Note1
32
A
Body-drain diode reverse drain current
IDR
16
A
Body-drain diode reverse drain peak current
IDR (pulse)
Note1
32
A
Avalanche current
IAP
Note3
4
A
Avalanche energy
EAR
Note3
0.87
mJ
Channel dissipation
Pch
Note2
35
W
Channel to case thermal impedance
θch-c
3.57
°C/W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25
°C
3. STch = 25
°C, Tch ≤ 150°C
4. Limited by maximum safe operation area




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