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GTS9922E Datasheet(PDF) 1 Page - GTM CORPORATION |
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GTS9922E Datasheet(HTML) 1 Page - GTM CORPORATION |
1 / 4 page GTS9922E Page: 1/4 ISSUED DATE :2005/10/26 REVISED DATE :2007/01/25B G G T T S S 99992222E E N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GTS9922E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Features *Low on-resistance *Capable of 2.5V gate drive *Optimal DC/DC battery application *Surface mount package Package Dimensions Millimeter Millimeter REF. Min. Max. REF. Min. Max. A - 1.20 E 6.20 6.60 A1 0.05 0.15 E1 4.30 4.50 b 0.19 0.30 e 0.65 BSC c 0.09 0.20 L 0.45 0.75 D 2.90 3.10 S 0° 8° Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current3, VGS@4.5V ID @TA=25 : 6.8 A Continuous Drain Current3, VGS@4.5V ID @TA=70 : 5.4 A Pulsed Drain Current1 IDM 25 A Total Power Dissipation PD @TA=25 : 1 W Linear Derating Factor 0.008 W/ : Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 : Thermal Data Parameter Symbol Value Unit Thermal Resistance Junction-ambient3 Max. Rthj-a 125 / : W BVDSS 20V RDS(ON) 15m ID 6.8A Pb Free Plating Product |
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