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GTT2603 Datasheet(PDF) 2 Page - GTM CORPORATION |
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GTT2603 Datasheet(HTML) 2 Page - GTM CORPORATION |
2 / 4 page 2/4 ISSUED DATE :2006/03/28 REVISED DATE : Electrical Characteristics (Tj = 25 :::: unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS -20 - - V VGS=0, ID=-250uA Breakdown Voltage Temperature Coefficient BVDSS / Tj - -0.1 - V/ : Reference to 25 , I : D=-1mA Gate Threshold Voltage VGS(th) -0.5 - -1.2 V VDS=VGS, ID=-250uA Forward Transconductance gfs - 9 - S VDS=-5V, ID=-2.8A Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±12V Drain-Source Leakage Current(Tj=25 ) : - - -1 uA VDS=-20V, VGS=0 Drain-Source Leakage Current(Tj=55 ) : IDSS - - -10 uA VDS=-16V, VGS=0 - - 53 VGS=-10V, ID=-4.5A - - 65 VGS=-4.5V, ID=-4.2A - - 120 VGS=-2.5V, ID=-2.0A Static Drain-Source On-Resistance2 RDS(ON) - - 250 m VGS=-1.8V, ID=-1.0A Total Gate Charge2 Qg - 10.6 16 Gate-Source Charge Qgs - 2.32 - Gate-Drain (“Miller”) Change Qgd - 3.68 - nC ID=-4.2A VDS=-16V VGS=-4.5V Turn-on Delay Time2 Td(on) - 5.9 - Rise Time Tr - 3.6 - Turn-off Delay Time Td(off) - 32.4 - Fall Time Tf - 2.6 - ns VDS=-15V ID=-4.2A VGS=-10V RG=6 RD=3.6 Input Capacitance Ciss - 740 1200 Output Capacitance Coss - 167 - Reverse Transfer Capacitance Crss - 126 - pF VGS=0V VDS=-15V f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - - -1.2 V IS=-1.2A, VGS=0V Reverse Recovery Time2 Trr - 27.7 - ns Reverse Recovery Charge Qrr - 22 - nC IS=-4.2A, VGS=0V dI/dt=100A/ s Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 156 /W when mounted on : Min. copper pad. |
Similar Part No. - GTT2603 |
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Similar Description - GTT2603 |
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