REJ03G1570-0100 Rev.1.00 Jul 06, 2007

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HAT2179R

Silicon N Channel MOS FET

High Speed Power Switching

REJ03G1570-0100

Rev.1.00

Jul 06, 2007

Features

• Low on-resistance

• Low drive current

• High density mounting

Outline

RENESAS Package code: PRSP0008DD-D

(Package name: SOP-8<FP-8DAV>)

1, 2, 3

Source

4

Gate

5, 6, 7, 8 Drain

G

D

SS S

D DD

4

1 23

56 7 8

1 2

3 4

5

6

7

8

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

600

V

Gate to source voltage

±30

V

Drain current

0.7

A

Drain peak current

Note1

2.0

A

Body-drain diode reverse drain current

0.7

A

Body-drain diode reverse drain peak current

Note1

2.0

A

Channel dissipation

Pch

Note2

2.5

W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

≤ 10 µs, duty cycle ≤ 1%

2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW

≤ 10 s