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NTE1112 Datasheet(PDF) 1 Page - NTE Electronics |
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NTE1112 Datasheet(HTML) 1 Page - NTE Electronics |
1 / 2 page NTE1112 Integrated Circuit Audio Power Amplifier, 4W @ 24V Description: The NTE1112 is an integrated monolithic circuit in a 14−lead DIP plastic package with external heat− sink. Features: D Output Power 2.2W (18V−16Ω) D Low Quiescent Output Current D High Efficiency Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Supply Voltage, VCC 27V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input Voltage (Note 1), Vi 0.5V to 27V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output Peak Current, IO 1A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power Dissipation (Tamb = 25°C), PD 1.35W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage and Junction Temperature Range, Tstg −55 to +150 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance Junction−Case, Rth j−case 17 °C/W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance Junction−Ambient, Rth j−amb 93 °C/W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Note 1. For V < 27V, Vimax = Vs Electrical Characteristics: (Tamb = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Total Quiescent Drain Current Id Vs = 12V − 5.0 − mA Vs = 18V − 6.2 − mA Quiescent Drain Current of Output Transistors Id Vs = 12V − 2.0 − mA Output Transistors Vs = 18V − 2.5 − mA Drain Current Id d = 10% RL = 16Ω, PO = 2.2W, VS = 18V − 175 − mA Input Bias Current Ib Vs = 18V − 180 − nA Output Power PO d = 3% Vs = 12V, RL = 8Ω − 1.0 − W Vs = 18V, RL = 16Ω − 1.7 − W Vs = 24V, RL = 50Ω − 1.25 − W d = 10% Vs = 12V, RL = 8Ω 1.0 1.4 − W Vs = 18V, RL = 16Ω − 2.2 − W Internal Feedback Resistance RF − 15 − k Ω |
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