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TPS62261DRVR Datasheet(PDF) 3 Page - Texas Instruments |
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TPS62261DRVR Datasheet(HTML) 3 Page - Texas Instruments |
3 / 32 page www.ti.com ELECTRICAL CHARACTERISTICS TPS62260, TPS62261, TPS62262 SLVS763 – JUNE 2007 Over full operating ambient temperature range, typical values are at T A = 25°C. Unless otherwise noted, specifications apply for condition V IN = EN = 3.6V. External components CIN = 4.7µF 0603, COUT = 10µF 0603, L = 2.2µH, see the parameter measurement information. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY VIN Input voltage range 2.3 6 V VIN 2.5 V to 6 V 600 IOUT Output current VIN 2.3 V to 2.5 V 300 mA VIN 2 V to 2.3 V 150 IOUT = 0 mA, PFM mode enabled 15 (MODE = GND) device not switching µA IOUT = 0 mA, PFM mode enabled (MODE = GND) device switching, VOUT = 1.8 V, 18.5 IQ Operating quiescent current See (1) IOUT = 0 mA, switching with no load (MODE = VIN), PWM operation, VOUT = 1.8 V, 3.8 mA VIN = 3 V ISD Shutdown current EN = GND 0.1 1 µA Falling 1.85 UVLO Undervoltage lockout threshold V Rising 1.95 ENABLE, MODE High level input voltage, EN, 2 V ≤ V IN ≤ 6 V 1 VIN VIH V MODE Low level input voltage, EN, 2 V ≤ V IN ≤ 6 V 0 0.4 VIL V MODE IIN Input bias current, EN, MODE EN, MODE = GND or VIN 0.01 1 µA POWER SWITCH High side MOSFET on-resistance 240 480 RDS(on) VIN = VGS = 3.6 V, TA = 25°C m Ω Low side MOSFET on-resistance 185 380 Forward current limit MOSFET ILIMF VIN = VGS = 3.6 V 0.8 1 1.2 A high-side and low side Thermal shutdown Increasing junction temperature 140 TSD °C Thermal shutdown hysteresis Decreasing junction temperature 20 OSCILLATOR fSW Oscillator frequency 2 V ≤ V IN≤ 6 V 2 2.25 2.5 MHz OUTPUT VOUT Adjustable output voltage range 0.6 VIN V Vref Reference voltage 600 mV MODE = VIN, PWM operation, for fixed output Feedback voltage PWM Mode voltage versions VFB = VOUT, –1.5% 0% 1.5% 2.5 V ≤ V IN ≤ 6 V, 0 mA ≤ IOUT ≤ 600 mA, See (2) VFB MODE = GND, device in PFM mode, voltage Feedback voltage PFM mode 1% positioning active, See (1) Load regulation PWM Mode -0.5 %/A Time from active EN to reach 95% of VOUT 500 tStart Up Start-up time µs nominal tRamp VOUT ramp up time Time to ramp from 5% to 95% of VOUT 250 µs VIN = 3.6 V, VIN = VOUT = VSW, EN = GND, Ilkg Leakage current into SW pin 0.1 1 µA See (3) (1) In PFM mode, the internal reference voltage is set to typ. 1.01 ×V ref. See the parameter measurement information. (2) For VIN = VO + 0.6 V (3) In fixed output voltage versions, the internal resistor divider network is disconnected from FB pin. 3 Submit Documentation Feedback |
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