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BC547 Datasheet(PDF) 4 Page - NXP Semiconductors

Part No. BC547
Description  NPN general purpose transistors
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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 4 page
background image
2004 Nov 25
4
Philips Semiconductors
Product specification
NPN general purpose transistors
BC546; BC547
CHARACTERISTICS
Tamb =25 °C unless otherwise specified.
Notes
1. VBEsat decreases by about 1.7 mV/K with increasing temperature.
2. VBE decreases by about 2 mV/K with increasing temperature.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector-base cut-off current
VCB = 30 V; IE =0 A
−−
15
nA
VCB = 30 V; IE = 0 A; Tj = 150 °C
−−
5
µA
IEBO
emitter-base cut-off current
VEB =5V; IC =0 A
−−
100
nA
hFE
DC current gain
VCE =5V; IC =10 µA;
see Figs 2, 3 and 4
BC546A
90
BC546B; BC547B
150
BC547C
270
DC current gain
VCE =5V; IC = 2 mA;
see Figs 2, 3 and 4
BC546A
110
180
220
BC546B; BC547B
200
290
450
BC547C
420
520
800
BC547
110
800
VCEsat
collector-emitter saturation
voltage
IC = 10 mA; IB = 0.5 mA
90
250
mV
IC = 100 mA; IB =5mA
200
600
mV
VBEsat
base-emitter saturation voltage
IC = 10 mA; IB = 0.5 mA; note 1
700
mV
IC = 100 mA; IB = 5 mA; note 1
900
mV
VBE
base-emitter voltage
VCE =5V; IC = 2 mA; note 2
580
660
700
mV
VCE =5V; IC =10mA
−−
770
mV
Cc
collector capacitance
VCB = 10 V; IE =ie = 0 A; f = 1 MHz −
1.5
pF
Ce
emitter capacitance
VEB = 0.5 V; IC =ic = 0 A;
f = 1 MHz
11
pF
fT
transition frequency
VCE =5V; IC = 10mA; f = 100 MHz 100
−−
MHz
F
noise figure
VCE =5V; IC = 200 µA; RS =2kΩ;
f = 1 kHz; B = 200 Hz
210
dB




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