Electronic Components Datasheet Search |
|
COP8SCE9HMT9 Datasheet(PDF) 8 Page - National Semiconductor (TI) |
|
|
COP8SCE9HMT9 Datasheet(HTML) 8 Page - National Semiconductor (TI) |
8 / 70 page 2.0 Electrical Characteristics (Continued) TABLE 1. DC Electrical Characteristics (0˚C ≤ T A ≤ +70˚C) (Continued) Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis. Parameter Conditions Min Typ Max Units Output Current Levels B0-B3 Outputs Source (Weak Pull-Up Mode) V CC = 4.5V, VOH = 3.8V −10 µA V CC = 2.7V, VOH = 1.8V -5 µA Source (Push-Pull Mode) (Note 7) V CC = 4.5V, VOH = 4.2V −10 mA V CC = 2.7V, VOH = 2.4V −6 mA Sink (Push-Pull Mode) (Note 7) V CC = 4.5V, VOL = 0.3V 10 mA V CC = 2.7V, VOL = 0.3V 6 mA Allowable Sink and Source Current per Pin 20 mA All Others Source (Weak Pull-Up Mode) V CC = 4.5V, VOH = 3.8V −10 µA V CC = 2.7V, VOH = 1.8V −5 µA Source (Push-Pull Mode) V CC = 4.5V, VOH = 3.8V −7 mA V CC = 2.7V, VOH = 1.8V −4 mA Sink (Push-Pull Mode) (Note 7) V CC = 4.5V, VOL = 1.0V 10 mA V CC = 2.7V, VOL = 0.4V 3.5 mA Allowable Sink and Source Current per Pin 15 mA TRI-STATE Leakage V CC = 5.5V −0.5 +0.5 µA Maximum Input Current without Latchup (Note 5) ±200 mA RAM Retention Voltage, V R (in HALT Mode) 2.0 V Input Capacitance 7pF Voltage on G6 to Force Execution from Boot ROM(Note 8) G6 rise time must be slower than 100 ns 2xV CC V CC +7 V G6 Rise Time to Force Execution from Boot ROM 100 nS Input Current on G6 when Input > V CC V IN =11V,VCC = 5.5V 500 µA Flash Memory Data Retention 25˚C 100 yrs Flash Memory Number of Erase/Write Cycles See Table 14, Typical Flash Memory Endurance 10 5 cycles AC Electrical Characteristics (0˚C ≤ T A ≤ +70˚C) Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis. Parameter Conditions Min Typ Max Units Instruction Cycle Time (t C) Crystal/Resonator 4.5V ≤ V CC ≤ 5.5V 0.5 DC µs 2.7V ≤ V CC < 4.5V 1.5 DC µs Flash Memory Page Erase Time See Table 14, Typical Flash Memory Endurance 1ms Flash Memory Mass Erase Time 8 ms Frequency of MICROWIRE/PLUS in Slave Mode 2 MHz MICROWIRE/PLUS Setup Time (t UWS)20 ns MICROWIRE/PLUS Hold Time (t UWH)20 ns MICROWIRE/PLUS Output Propagation Delay (t UPD) 150 ns www.national.com 8 |
Similar Part No. - COP8SCE9HMT9 |
|
Similar Description - COP8SCE9HMT9 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |