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MB82DP02183C-65L Datasheet(PDF) 5 Page - Fujitsu Component Limited.

Part # MB82DP02183C-65L
Description  32M Bit (2 M word 횞 16 bit) Mobile Phone Application Specific Memory
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Manufacturer  FUJITSU [Fujitsu Component Limited.]
Direct Link  http://edevice.fujitsu.com/fmd/en/index.html
Logo FUJITSU - Fujitsu Component Limited.

MB82DP02183C-65L Datasheet(HTML) 5 Page - Fujitsu Component Limited.

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MB82DP02183C-65L
5
■ FUNCTION TRUTH TABLE
Notes : L = VIL, H = VIH, X can be either VIL or VIH, High-Z = High Impedance
*1 : Should not be kept this logic condition longer than 1
µs.
*2 : Power Down mode can be entered from Standby state and all DQ pins are in High-Z state.
Data retention depends on the selection of Power Down Program.
Refer to “■ Power Down” for the detail.
*3 : Can be either VIL or VIH but must be valid before Read or Write.
*4 : OE can be VIL during Write operation if the following conditions are satisfied;
(1) Write pulse is initiated by CE1. See “(12) READ/WRITE Timing #1-1 (CE1 Control)” in “■ TIMING
DIAGRAMS”.
(2) OE stays VIL during Write cycle.
Mode
CE2
CE1WE
OE
LB
UB
A20 to A0
DQ8 to
DQ1
DQ16 to
DQ9
Standby
(Deselect)
H
H
XXXX
X
High-Z
High-Z
Output Disable*1
HL
H
H
X
X
*3
High-Z
High-Z
Output Disable
(No Read)
HL
H
H
Valid
High-Z
High-Z
Read (Upper Byte)
H
L
Valid
High-Z
Output
Valid
Read (Lower Byte)
L
H
Valid
Output
Valid
High-Z
Read (Word)
L
L
Valid
Output
Valid
Output
Valid
No Write
LH*4
H
H
Valid
Invalid
Invalid
Write (Upper Byte)
H
L
Valid
Invalid
Input Valid
Write (Lower Byte)
L
H
Valid
Input Valid
Invalid
Write (Word)
L
L
Valid
Input Valid Input Valid
Power Down*2
L
XXXXX
X
High-Z
High-Z


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