MB82DP02183C-65LWT datasheet(8/32 Pages) FUJITSU

Part #	MB82DP02183C-65LWT

Description	32M Bit (2 M word 횞 16 bit) Mobile Phone Application Specific Memory

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Manufacturer	FUJITSU [Fujitsu Component Limited.]

Direct Link	http://edevice.fujitsu.com/fmd/en/index.html

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MB82DP02183C-65L

8

■ ELECTRICAL CHARACTERISTICS

(At recommended operating conditions unless otherwise noted.)

1.

DC CHARACTERISTICS

Notes :

• All voltages are referenced to VSS.

• IDD depends on the output termination, load conditions, and AC characteristics.

• After power on, initialization following POWER-UP timing is required. DC characteristics are guaranteed

after the initialization.

Parameter

Symbol

Test conditions

Value

Unit

Min

Max

Input Leakage Current

ILI

VSS

≤ VIN ≤ VDD

−1.0

+1.0

µA

Output Leakage Current

ILO

0 V

≤ VOUT ≤ VDD,

Output Disable

−1.0

+1.0

µA

Output High Voltage Level

VOH

VDD

= VDD Min, IOH = −0.5 mA

2.4

⎯

V

Output Low Voltage Level

VOL

IOL

= 1 mA

⎯

0.4

V

VDD Power Down Current

IDDPS

VDD

= VDD (26) Max,

VIN

= VIH or VIL,

CE2

≤ 0.2 V

SLEEP

⎯

10

µA

IDDP4

4M-bit partial

⎯

40

µA

IDDP8

8M-bit partial

⎯

50

µA

VDD Standby Current

IDDS

VDD

= VDD (26) Max, VIN = VIH or VIL,

CE1

= CE2 = VIH

⎯

1.5

mA

IDDS1

VDD

= VDD (26) Max,

VIN

≤ 0.2 V or VIN ≥ VDD − 0.2 V,

CE1

= CE2 ≥ VDD − 0.2 V

⎯

80

µA

VDD Active Current

IDDA1

VDD

= VDD (26) Max,

VIN

= VIH or VIL,

CE1 = VIL and CE2

= VIH,

IOUT

= 0 mA

tRC/tWC

= Min

⎯

30

mA

IDDA2

tRC/tWC

= 1 µs

⎯

3mA

VDD Page Read Current

IDDA3

VDD

= VDD (26) Max, VIN = VIH or VIL,

CE1

= VIL and CE2 = VIH,

IOUT

= 0 mA, tPRC = Min

⎯

10

mA

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MB82DP02183C-65LWT Datasheet(PDF) 8 Page - Fujitsu Component Limited.

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