2007. 6. 29

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SEMICONDUCTOR

TECHNICAL DATA

KMB014P30QA

P-Ch Trench MOSFET

Revision No : 1

GENERAL DESCRIPTION

This Trench MOSFET has better characteristics, such as fast switching time, low

on resistance,, low gate charge and excellent avalanche characteristiscs. It is mainly

suitable for portable for portable equipment and SMPS.

FEATURES

Drain-Source ON Resistance.

Super High Dense Cell Design

MOSFET Maximum Ratings (Ta=25

Unless otherwise noted)

B2

G

H

B1

1

4

5

8

A

P

D

L

T

FLP-8

0.20+0.1/-0.05

T

P

1.27

MILLIMETERS

DIM

A

4.85

0.2

+

_

B1

3.94

0.2

+

_

B2

6.02

0.3

+

_

D

0.4

0.1

+

_

G

0.15+0.1/-0.05

H

1.63

0.2

+

_

L

0.65

0.2

+

_

Note : *Surface Mounted on FR4 Board

PIN CONNECTION (TOP VIEW)

1

2

3

4

8

7

6

5

S

S

S

G

D

D

D

D

1

2

3

4

8

7

6

5

CHARACTERISTIC

SYMBOL

PATING

UNIT

Drain Source Voltage

-30

V

Gate Source Voltage

25

V

Drain Current

DC

-14

A

Pulsed

-70

A

Drain Source Diode Forward Current

-1.7

A

Drain Power Dissipation

2.5

W

Maximum Junction Temperature

150

Storage Temperature Range

-55~150

Thermal Resistance, Junction to Ambient

50

/W

706

KMB014P

30QA