ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

2800 V

5380 A

8450 A

=

65×10

=

0.77 V

=

0.082 m

Ω

Rectifier Diode

5SDD 51L2800

Doc. No. 5SYA1103-01 Feb. 05

• Patented free-floating silicon technology

• Very low on-state losses

• High average and surge current.

Blocking

Maximum rated values

1)

Parameter

Symbol Conditions

Value

Unit

Repetitive peak reverse voltage

2000

V

Non-repetitive peak reverse voltage

2800

V

Non-repetitive peak reverse voltage

≤ 5ms, T

3000

V

Characteristic values

Parameter

Symbol Conditions

min

typ

max

Unit

Max. (reverse) leakage current

400

mA

Mechanical data

Maximum rated values

1)

Parameter

Symbol Conditions

min

typ

max

Unit

Mounting force

63

70

77

kN

Acceleration

a

Device unclamped

50

m/s

2

Acceleration

a

Device clamped

100

m/s

2

Characteristic values

Parameter

Symbol Conditions

min

typ

max

Unit

Weight

m

1.45

kg

Housing thickness

H

25.7

26.3

mm

Surface creepage distance

35

mm

Air strike distance

14

mm

1) Maximum rated values indicate limits beyond which damage to the device may occur