5SDF 03D4502

ABB Semiconductors AG reserves the right to change specifications without notice.

Doc. No. 5SYA1117-02 Sep. 01

page 2 of 5

Max. average on-state current

275 A

Max. RMS on-state current

435 A

Max. peak non-repetitive

5 kA

tp

=

10 ms

Before surge:

surge current

10 kA

tp =

1 ms

⋅10

10 ms

After surge:

òI

Max. surge current integral

50

⋅10

1 ms

≈ 0 V

Forward voltage drop

≤

3.9 V

630 A

Threshold voltage

2.15 V

Approximation for

Slope resistance

2.8 mΩ

A

Turn-on

Peak forward recovery voltage

≤

370 V

Max. decay rate of on-state current

≤

Reverse recovery current

≤

355 A

Reverse recovery charge

≤

930 µC

Turn-off energy

≤

1.8 J

Thermal

Operating junction temperature range

-40...115°C

Storage temperature range

-40...125°C

Thermal resistance junction to case

≤

80 K/kW

Anode side cooled

≤

80 K/kW

Cathode side cooled

≤

40 K/kW

Double side cooled

Thermal resistance case to heatsink

≤

16 K/kW

Single side cooled

14… 18 kN

≤

8 K/kW

Double side cooled

Analytical function for transient thermal impedance.

i1

2

3

4

20.95

10.57

7.15

1.33

0.396

0.072

0.009

0.0044

)

e

-

(1

R

=

(t)

Z

n

1

i

/

t

-

i

thJC

å

=

i

τ