ABB Semiconductors AG reserves the right to change specifications without notice.

4500 V

2000 A

=13 kA

=1.80 V

=0.85 m

Ω

2200 V

Gate turn-off Thyristor

5SGA 20H4502

Doc. No. 5SYA 1210-01 Aug. 2000

• Patented free-floating silicon technology

• Low on-state and switching losses

• Annular gate electrode

• Industry standard housing

• Cosmic radiation withstand rating

Blocking

Repetitive peak off-state voltage

4500

V

≥ 2V

Repetitive peak reverse voltage

17

V

Repetitive peak off-state current

≤

100

mA

≥ 2V

Repetitive peak reverse current

≤

50

mA

∞

Permanent DC voltage for 100

FIT failure rate

2200

V

-40

≤ T

j

≤ 125 °C. Ambient cosmic

radiation at sea level in open air.

min.

17 kN

Mounting force

max.

24 kN

A

Acceleration:

Device unclamped

Device clamped

50

200

m/s

2

m/s

2

MWeight

0.8 kg

Surface creepage distance

≥

22 mm

Air strike distance

≥

13 mm