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SSC-YGT801 Datasheet(PDF) 3 Page - Seoul Semiconductor |
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SSC-YGT801 Datasheet(HTML) 3 Page - Seoul Semiconductor |
3 / 8 page 3. Absolute Maximum Ratings *1 (Ta=25ºC) Parameter Symbol Value Unit Power Dissipation Pd 75 mW Forward Current IF 30 mA Peak Forward Current IFM *2 60 mA Reverse Voltage VR 5 V Operating Temperature Topr -40 ~ +100 ºC Storage Temperature Tstg -40 ~ +100 ºC *1 Care is to be taken that power dissipation does not exceed the absolute maximum rating of the product. *2 IFM was measured at TW ≤ 0.1msec of pulse width and D ≤ 1/10 of duty ratio. 4. Electro-Optical Characteristics (Ta=25ºC) Parameter Symbol Condition Min Typ Max Unit Forward Voltage VF I F =20mA - 2.2 2.6 V Reverse Current IR V R=5V - - 10 µA Luminance Intensity *1 IV I F =20mA 16 22 - mcd Peak Wavelength λ P I F =20mA - 574 - nm Dominant Wavelength λ d I F =20mA - 570 - nm Spectral Bandwidth 50% ∆λ I F =20mA - 45 - nm Viewing Angle *2 2 θ ½ I F =20mA - 120 - deg. *1 The luminous intensity IV was measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED package. Luminous Intensity Measurement allowance is ±10%. *2 2 θ½ is the off-axis where the luminous intensity is 1/2 of the peak intensity. SEOUL SEMICONDUCTOR CO,. LTD. 148-29 Kasan-Dong, Keumchun-Gu, Seoul, 153-023, Korea Phone : 82-2-2106-7305~6 - 3/8 - SSC-YGT801 SSC-QP-0401-06(REV.1.1) [Note] All measurements were made under the standardized environment of SSC. |
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