ABB Semiconductors AG

5SDA 09D2604

Doc. No. 5SYA 1121 - 01 Apr-98

ABB Semiconductors AG

Fabrikstrasse 3

CH-5600 Switzerland

Telephone +41 (0)62 888 6419

Fax

+41 (0)62 888 6306

On-state

Max. average on-state current

1020 A

Max. RMS on-state current

1600 A

Max. peak non-repetitive

11.5 kA

tp

=

10 ms

160°C

surge current

12.5 kA

tp

=

8.3 ms

After surge:

I

Limiting load integral

660

tp

=

10 ms

650

tp

=

8.3 ms

Threshold voltage

0.87 V

= 1000 - 3000 A

160°C

Slope resistance

0.39 m

Ω

On-state voltage

1.35 V

=

1800 A

25°C

On-state voltage

1.50 V

Thermal

Storage and operating

-40...160°C

junction temperature range

Thermal resistance

80

K/kW

Anode side cooled

junction to case

80

K/kW

Cathode side cooled

40

K/kW

Double side cooled

Thermal resistance case to

16

K/kW

Single side cooled

heat sink

8

K/kW

Double side cooled

maximum on-state current can be calculated as follows:

I

=

-V

+

(V )

4 * f * r * P

2 * f

r

FAVM

F0

F0

2

f

2

f

2

+

*

where

P =

T

- T

R

J max

C

thjc

or

P =

T

- T

R

J max

A

thja

Analytical function for transient thermal impedance:

Z

(t) =

R (1- e

)

thJC

i

-t /

i 1

4

i

τ

=

∑

i

1

2

3

4

20.95

10.57

7.15

1.33

τ

0.396

0.072

0.009

0.0044

t [s]

2

3 4 5 6 7

2

3

4 5 6 7

2

3 4 5 5 6

2

3 4 5 6 7

0

5

10

15

20

25

30

35

40

45

F

Double Side Cooling

[K/kW]

P (W)

Ω)

f

1

for DC current

2.5

for half-sine wave

3.1

for 120°el., sine

6

for 60° el., sine