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P3C1011-35TC Datasheet(PDF) 1 Page - Pyramid Semiconductor Corporation |
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P3C1011-35TC Datasheet(HTML) 1 Page - Pyramid Semiconductor Corporation |
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1 / 10 page  1 Document # SRAM131 REV OR Revised March 2006 P3C1011 HIGH SPEED 128K x 16 (2 MEG) STATIC CMOS RAM High Speed (Equal Access and Cycle Times) — 10/12/15/20 ns (Commercial) — 12/15/20 ns (Industrial) — 20/25/35 (Military) Low Power — 360 mW (max.) Single 3.3V ± 0.3V Power Supply FUNCTIONAL BLOCK DIAGRAM PIN CONFIGURATION 1519B FEATURES DESCRIPTION The P3C1011 is a 131,072 words by 16 bits high-speed CMOS static RAM. The CMOS memory requires no clocks or refreshing, and has equal access and cycle times. Inputs are fully TTL-compatible. The RAM oper- ates from a single 3.3V ± 0.3V tolerance power supply. Access times as fast as 10 nanoseconds permit greatly enhanced system operating speeds. CMOS is utilized to reduce power consumption to a low level. The P3C1011 is a member of a family of PACE RAM™ products offer- ing fast access times. The P3C1011 device provides asynchronous operation with matching access and cycle times. Memory loca- tions are specified on address pins A 0 to A17. Reading is accomplished by device selection ( CE and output en- abling ( OE) while write enable (WE) remains HIGH. By presenting the address under these conditions, the data in the addressed memory location is presented on the data input/output pins. The input/output pins stay in the HIGH Z state when either CE or OE is HIGH or WE is LOW. For both reading and writing, the Byte Enable control lines ( BLE for I/O 0-7 and BHE for I/O8-15) allow for the selection of only 8 of the 16 I/O lines if desired. When a Byte Enable control line is HIGH, the corresponding I/Os are active. Package options for the P3C1011 include 44-pin SOJ and TSOP packages. 2.0V Data Retention Easy Memory Expansion Using CE CE CE CE CE and OE OE OE OE OE Inputs Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Fast t OE Automatic Power Down when deselected Packages —44-Pin SOJ, TSOP II SOJ TSOPII |
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