DN2625K6-G datasheet(3/7 Pages) SUTEX

Part #	DN2625K6-G

Description	N-Channel Depletion-Mode Vertical DMOS FETs

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Manufacturer	SUTEX [Supertex, Inc]

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3

DN2625

Typical Performance Curves

Electrical Characteristics (cont) @25OC unless otherwise speciﬁed

Symbol

Parameter

Min

Typ

Max

Units

Conditions

I

GSS

Gate body leakage current

-

100

nA

V

GS = ±20V, VDS = 0V

I

D(OFF)

Drain-to-source leakage current

-

1.0

µA

V

DS = 250V, VGS = -5.0V

-

200

µA

V

DS = 250V, VGS = -5.0V,

T

A = 125

OC

I

DSS

Saturated drain-to-source current

1.1

-

A

V

GS = 0V, VDS = 15V

I

DS(PULSE)

Pulsed drain-to-source current

3.1

3.3

-

A

V

GS = 0.9V, VDS = 15V with duty

cycle of 1%

R

DS(ON)

Static drain-to-source ON resistance

-

3.5

Ω

V

GS = 0V, ID = 1.0A

ΔR

DS(ON)

Change in R

DS(ON) with temperature

-

1.1

%/OCV

GS = 0V, ID = 200mA

G

FS

Forward transconductance

1.0

-

mmho

V

DS = 10V, ID = 150mA

C

ISS

Input capacitance

-

800

1000

pF

V

GS = -2.5V,

V

DS = 25V,

f = 1.0MHz

C

OSS

Common source output capacitance

-

70

210

C

RSS

Reverse transfer capacitance

-

18

70

t

d(ON)

Turn-ON delay time

-

10

ns

V

DD = 25V,

I

D = 150mA,

R

GEN = 3.0Ω,

V

GS = 0v to -10V

t

r

Rise time

-

20

t

d(OFF)

Turn-OFF delay time

-

10

t

f

Fall time

-

20

V

SD

Diode forward voltage drop

-

1.8

V

GS = -2.5V, ISD = 150mA

Output Characteristics

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

7.0

7.5

0

50

100

150

200

250

VDS (V)

VGS = 2.0V

VGS = 1.5V

VGS = 1.0V

VGS = 0.5V

VGS = 0V

VGS = -0.5V

VGS = -1.0V

VGS = -1.5V

VGS = -2.0V

Similar Part No. - DN2625K6-G

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