5SLX 12L2510

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1664-02 Feb. 05

page 2 of 3

0

20

40

60

80

100

120

140

160

180

200

0

0.5

1

1.5

2

2.5

25 °C

125 °C

0

25

50

75

100

125

150

0

50

100

150

200

di/dt = 440 A/µs

Fig. 1

Typical forward characteristics

Fig. 2

Typical reverse recovery characteristics

vs. forward current

-200

-150

-100

-50

0

50

100

150

0

1000

2000

3000

4000

5000

time [ns]

-1400

-1200

-1000

-800

-600

-400

-200

0

di/dt = 440 A/µs

0

20

40

60

80

100

120

140

160

0

100

200

300

400

500

600

700

800

di/dt [A/µs]

Fig. 3

Typical reverse recovery behaviour

Fig. 4

Typical reverse recovery characteristics

vs. di/dt