Sep. 2000

MITSUBISHI IGBT MODULES

CM30AD00-12H

MEDIUM POWER SWITCHING USE

FLAT BASE, INSULATED TYPE

Repetitive peak off-state current

Repetitive peak reverse current

On-state voltage

Gate trigger current

Gate trigger voltage

Holding current

Thermal resistance

THYRISTOR PART

dv/dt

Critical rate of rise of off-state

Voltage

1

1

1.19

100

3

—

1.3

mA

mA

V

mA

V

mA

°C/W

—

—

—

—

—

50

—

—

—

—

—

—

—

—

Symbol

Parameter

Test conditions

Unit

Typ.

Limits

Min.

Max.

500

—

—

V/

µs

—

—

Resistance

Temperature coefficient

Measured between N-N1

m

Ω

%/

°C

2.9

0.051

—

—

R

—

Symbol

Parameter

Test conditions

Unit

Typ.

Limits

Min.

Max.

RESISTOR PART

—

—

Resistance

B Constant

°C

Resistance at 25

°C, 50°C

(Note.5)

k

Ω

K

100

4000

—

—

B

Symbol

Parameter

Test conditions

Unit

Typ.

Limits

Min.

Max.

THERMISTOR PART

°C.

4 Pulse width and repetition rate should be such as to cause negligible temperature rise.

—

Contact thermal resistance

Case to fin, Thermal compound applied

°C/W

0.035

—

Symbol

Parameter

Test conditions

Unit

Typ.

Limits

Min.

Max.

COMMON RATING