2000 Feb 18

11

Philips Semiconductors

Objective specification

Low power dual-band GSM transceiver

with an image rejecting front-end

UAA3522HL

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

HANDLING

Inputs and outputs are protected against electrostatic discharge in normal handling. However it is good practice to take

normal precautions appropriate to handling MOS devices (see

“Handling MOS devices”).

THERMAL CHARACTERISTICS

DC CHARACTERISTICS

SYMBOL

PARAMETER

MIN.

TYP.

MAX.

UNIT

supply voltage

−0.3

−

+6

V

total power dissipation

−−

1W

storage temperature

−40

−

+150

°C

ambient temperature

−30

−

+70

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to ambient

in free air

65

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

supply voltage

note 1

2.7

−

3.3

V

supply voltage

note 1

2.7

−

4V

supply voltage for charge pump of

phase detector in transmit

modulation loop

note 1

2.7

−

5.5

V

total power-down supply current

pins TXON,

RXON, SYNON = LOW-level;

pins EN, DATA, CLK = HIGH-l

evel; note 2

−

40

100

µA

RF receiver and IF section total

supply current

RX mode active

−

16.9

21.9

mA

I/Q demodulator supply current

RX mode active

−

10.1

14.1

mA

I/Q modulator supply current

TX mode active

−

7.4

9.6

mA