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5SMY12K1201 Datasheet(PDF) 1 Page - ABB |
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5SMY12K1201 Datasheet(HTML) 1 Page - ABB |
1 / 5 page ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. VCE = 1200 V IC = 100 A Die size: 11.9 x 11.2 mm Doc. No. 5SYA1635-01 Sep 06 • Ultra low loss thin IGBT die • Highly rugged SPT+ design • Large bondable emitter area Maximum rated values 1) Parameter Symbol Conditions min max Unit Collector-emitter voltage VCES VGE = 0 V, Tvj ≥ 25 °C 1200 V DC collector current IC 100 A Peak collector current ICM Limited by Tvjmax 200 A Gate-emitter voltage VGES -20 20 V IGBT short circuit SOA tpsc VCC = 900 V, VCEM ≤ 1200 V VGE ≤ 15 V, T vj ≤ 125 °C 10 µs Junction temperature Tvj -40 150 °C 1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9 IGBT-Die 5SMY 12K1201 |
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