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5SNE0800M1701 Datasheet(PDF) 8 Page - ABB |
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5SNE0800M1701 Datasheet(HTML) 8 Page - ABB |
8 / 9 page 5SNE 0800M170100 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1590-00 Oct 06 page 8 of 9 Erec [mJ] = -0.105 x 10 -3 x I F 2 + 352 x 10-3 x I F + 49 0 100 200 300 400 0 400 800 1200 1600 IF [A] 0 200 400 600 800 Irr Qrr Erec VCC = 900 V VGE = ±15 V RG = 1.2 ohm Tvj = 125 °C Lσ = 80 nH 0 100 200 300 400 0 1 2 3 4 5 di/dt [kA/µs] 0 200 400 600 800 VCC = 900 V IF = 800 A Tvj = 125 °C Lσ = 80 nH Erec Qrr Irr Fig. 12 Typical reverse recovery characteristics vs forward current Fig. 13 Typical reverse recovery characteristics vs di/dt 0 200 400 600 800 1000 1200 1400 1600 0 0.5 1 1.5 2 2.5 VF [V] 125°C 25°C 0 400 800 1200 1600 0 500 1000 1500 2000 VR [V] VCC ≤ 1200 V di/dt ≤ 5 kA/µs Tvj = 125 °C Fig. 14 Typical diode forward characteristics, chip level Fig. 15 Safe operating area diode (SOA) |
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