5STB 13N6500

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1035-03 May 06

page 3 of 7

Triggering

Maximum rated values

Note 1

Parameter

Symbol Conditions

min

typ

max

Unit

Peak forward gate voltage

12

V

Max. rated peak forward

gate current

10

A

Peak reverse gate voltage

10

V

Max. rated gate power loss

For DC gate current

3

W

Max. rated peak forward

gate power

see Fig. 9

Characteristic values

Parameter

Symbol Conditions

min

typ

max

Unit

Gate trigger voltage

2.6

V

Gate trigger current

400

mA

Gate non-trigger voltage

0.3

V

Gate non-trigger current

10

mA

Thermal

Maximum rated values

Note 1

Parameter

Symbol Conditions

min

typ

max

Unit

Operating junction

temperature range

125

°C

Storage temperature range

-40

140

°C

Characteristic values

Parameter

Symbol Conditions

min

typ

max

Unit

Double-side cooled

11.4

K/kW

Anode-side cooled

22.8

K/kW

Thermal resistance junction

to case

(Valid for one thyristor half

no heat flow to the second

half.)

Cathode-side cooled

22.8

K/kW

Thermal resistance case to

heatsink

Double-side cooled

2

K/kW

Single-side cooled

4

K/kW

Analytical function for transient thermal

impedance:

)

e

-

(1

R

=

(t)

Z

n

1

i

t/

-

i

c)

-

th(j

∑

=

i

τ

i

1

2

3

4

6.770

2.510

1.340

0.780

τ

0.8651

0.1558

0.0212

0.0075

Fig. 1 Transient thermal impedance junction-to case