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AP9918H Datasheet(PDF) 5 Page - Advanced Power Electronics Corp. |
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AP9918H Datasheet(HTML) 5 Page - Advanced Power Electronics Corp. |
5 / 6 page AP9918H/J Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0 2 4 6 8 10 12 0 5 10 15 20 25 30 35 Q G , Total Gate Charge (nC) I D =18A V DS =15V V DS =20V V DS =10V 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -50 0 50 100 150 Junction Temperature ( o C ) 0.01 0.1 1 10 100 0 0.4 0.8 1.2 1.6 V SD (V) T j =25 o C T j =150 o C 10 100 1000 10000 1 5 9 1317 2125 29 V DS (V) f=1.0MHz Ciss Coss Crss |
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