5STP 09D1801

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1058-01 March 05

page 3 of 6

Triggering

Maximum rated values

1)

Parameter

Symbol Conditions

min

typ

max

Unit

Peak forward gate voltage

12

V

Peak forward gate current

10

A

Peak reverse gate voltage

10

V

Mean forward gate power

3

W

Characteristic values

Parameter

Symbol Conditions

min

typ

max

Unit

Gate-trigger voltage

0.25

4

3

2

V

Gate-trigger current

10

500

250

150

mA

Thermal

Maximum rated values

1)

Parameter

Symbol Conditions

min

typ

max

Unit

Operating junction

temperature range

-40

125

°C

Storage temperature range

-40

125

°C

Characteristic values

Parameter

Symbol Conditions

min

typ

max

Unit

Thermal resistance junction

to case

Double-side cooled

32

K/kW

Anode-side cooled

52

K/kW

Cathode-side cooled

83

K/kW

Thermal resistance case to

heatsink

Double-side cooled

7.5

K/kW

Single-side cooled

15

K/kW

Analytical function for transient thermal

impedance:

)

e

-

(1

R

=

(t)

Z

n

1

i

t/

-

i

th

c)

-

th(j

∑

=

i

τ

i

1

2

3

4

13.070

8.030

8.200

2.700

τ

0.4857

0.2162

0.0762

0.0043

Fig. 1 Transient thermal impedance junction-to case.