ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

= 8000

V

= 8500

V

A

A

= 35×10

3

A

= 1.25

V

= 0.48

m

Ω

Phase Control Thyristor

5STP 12N8500

Doc. No. 5SYA1044-02 Nov. 04

• Patented free-floating silicon technology

• Low on-state and switching losses

• Designed for traction, energy and industrial applications

• Optimum power handling capability

• Interdigitated amplifying gate

Blocking

Maximum rated values

1)

Symbol

Conditions

5STP 12N8500

5STP 12N8200

5STP 12N7800

8500 V

8200 V

7800 V

8000 V

7700 V

7300 V

9000 V

8600 V

8200 V

2000 V/µs

Characteristic values

Parameter

Symbol Conditions

min

typ

max

Unit

Forward leakage current

1000

mA

Reverse leakage current

400

mA

Mechanical data

Maximum rated values

1)

Parameter

Symbol Conditions

min

typ

max

Unit

Mounting force

81

90

108

kN

Acceleration

a

Device unclamped

50

m/s

2

Acceleration

a

Device clamped

100

m/s

2

Characteristic values

Parameter

Symbol Conditions

min

typ

max

Unit

Weight

m

2.9

kg

Housing thickness

H

35.3

36

mm

Surface creepage distance

56

mm

Air strike distance

22

mm

1) Maximum rated values indicate limits beyond which damage to the device may occur