ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

=

2800 V

=

3740 A

=

5880 A

=

60000 A

=0.95 V

=0.1 mΩ

Ω

Ω

Ω

Phase Control Thyristor

5STP 33L2800

Doc. No. 5SYA1011-03 Jan. 02

•••• Patented free-floating silicon technology

•••• Low on-state and switching losses

•••• Designed for traction, energy and industrial applications

•••• Optimum power handling capability

•••• Interdigitated amplifying gate

Blocking

Maximum rated values

1)

Symbol

Conditions

5STP 33L2800 5STP 33L2600 5STP 33L2200

2800 V

2600 V

2200 V

3000 V

2800 V

2400 V

1000 V/µs

Characteristic values

Parameter

Symbol Conditions

min

typ

max

Unit

Forwarde leakage current

400

mA

Reverse leakage current

400

mA

Mechanical data

Maximum rated values

1)

Parameter

Symbol Conditions

min

typ

max

Unit

Mounting force

63

70

84

kN

Acceleration

a

Device unclamped

50

m/s

2

Acceleration

a

Device clamped

100

m/s

2

Characteristic values

Parameter

Symbol Conditions

min

typ

max

Unit

Weight

m

1.45

kg

Surface creepage distance

36

mm

Air strike distance

15

mm