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5STP34H1201 Datasheet(PDF) 4 Page - ABB |
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5STP34H1201 Datasheet(HTML) 4 Page - ABB |
4 / 6 page 5STP 34H1601 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1065-01 March 05 page 4 of 6 0 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 22000 0 0,5 1 1,5 2 2,5 3 V T ( V ) 25°C 125°C 30 35 40 45 50 55 60 65 70 75 80 1 10 100 t ( m s ) 8 9 10 11 12 13 14 15 16 17 18 I TSM ∫i 2dt Fig. 2 Max. on-state voltage characteristics Fig. 3 Surge forward current vs. pulse length. Half sine wave, single pulse, VR = 0 V 0 1 2 3 4 5 6 7 0 0,5 1 I G ( A ) +125 °C +25 °C -40 °C V GTmin DC = P GAVm 0 2 4 6 8 10 12 14 0 2 4 6 8 10 12 I G ( A ) DC = P GAVm 10ms 1ms 500µs V FGM Fig. 4 Gate trigger characteristics Fig. 5 Gate trigger characteristics |
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