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2SK2617ALS Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # 2SK2617ALS
Description  N-Channel Silicon MOSFET General-Purpose Switching Device
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SK2617ALS Datasheet(HTML) 2 Page - Sanyo Semicon Device

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2SK2617ALS
No. A0361-2/4
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
500
V
Zero-Gate Voltage Drain Current
IDSS
VDS=500V, VGS=0V
1.0
mA
Gate-to-Source Leakage Current
IGSS
VGS=±30V, VDS=0V
±100
nA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
3.5
5.5
V
Forward Transfer Admittance
yfs
VDS=10V, ID=2A
1.1
2.2
S
Static Drain-to-Source On-State Resistance
RDS(on)
ID=2A, VGS=15V
1.2
1.6
Ω
Input Capacitance
Ciss
VDS=20V, f=1MHz
550
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
190
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
95
pF
Total Gate Charge
Qg
VDS=200V, ID=4A, VGS=10V
15
nC
Turn-ON Delay Time
td(on)
See specified Test Circuit.
15
ns
Rise Time
tr
See specified Test Circuit.
15
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
45
ns
Fall Time
tf
See specified Test Circuit.
25
ns
Diode Forward Voltage
VSD
IS=4A, VGS=0V
0.95
1.2
V
Package Dimensions
Switching Time Test Circuit
unit : mm (typ)
7509-002
Avalanche Resistance Test Circuit
0.7
2.55
2.55
1.2
0.9
0.75
1.2
4.5
2.8
12 3
10.0
3.2
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
PW=1µs
D.C.≤0.5%
P.G
RGS
50Ω
G
S
D
ID=2A
RL=100Ω
VDD=200V
VOUT
2SK2617ALS
VGS=15V
50Ω
≥50Ω
RG
VDD
L
15V
0V
2SK2617ALS


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