Sep. 2001

Gate-emitter threshold voltage

Collector-emitter saturation voltage

°C

°C

Ω, Inductive load switching operation

°C

°C

IGBT part (1/2 module)

FWDi part (1/2 module)

Tc measured point is just under the chips

1700

±20

200

400

200

400

1100

–40 ~ +150

–40 ~ +125

3500

3.5 ~ 4.5

3.5 ~ 4.5

580

MITSUBISHI IGBT MODULES

CM200DU-34KA

HIGH POWER SWITCHING USE

V

V

W

°C

°C

V

N • m

N • m

g

A

A

1

0.5

4.0

—

29

4.8

1.5

—

600

200

700

800

600

—

4.6

—

0.11

0.18

—

mA

µA

nF

nC

µC

V

V

°C/W

—

—

3.2

3.8

—

—

—

900

—

—

—

—

—

9.6

—

2.2

—

—

0.02

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

5.5

V

V

ns

47

ns

Collector cutoff current

Gate leakage current

Input capacitance

Output capacitance

Reverse transfer capacitance

Total gate charge

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Reverse recovery time

Reverse recovery charge

Emitter-collector voltage

Contact thermal resistance

Thermal resistance

Symbol

Parameter

°C.

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

Collector-emitter voltage

Gate-emitter voltage

Maximum collector dissipation

Junction temperature

Storage temperature

Isolation voltage

Weight

G-E Short

C-E Short

°C

Pulse

(Note 2)

°C

Pulse

(Note 2)

°C

Main terminal to base plate, AC 1 min.

Main Terminal M6

Mounting holes M6

Typical value

Symbol

Parameter

Collector current

Emitter current

Torque strength

Conditions

Unit

Ratings

—

Unit

Typ.

Limits

Min.

Max.

—

°C)

°C)

Test conditions