Electronic Components Datasheet Search |
|
CM400DY-50H Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
|
CM400DY-50H Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
2 / 4 page Mar. 2003 MITSUBISHI HVIGBT MODULES CM400DY-50H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) MAXIMUM RATINGS (Tj = 25 °C) VGE = 0V VCE = 0V DC, TC = 80 °C Pulse (Note 1) Pulse (Note 1) TC = 25 °C, IGBT part — — Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value 2500 ±20 400 800 400 800 3400 –40 ~ +150 –40 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 V V A A A A W °C °C V N·m N·m N·m kg Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass Collector current Emitter current Symbol Item Conditions Unit Ratings VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso — — V V VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V Tj = 25 °C Tj = 125 °C VCC = 1250V, IC = 400A, VGE = 15V VCC = 1250V, IC = 400A VGE1 = VGE2 = 15V RG = 7.5 Ω Resistive load switching operation IE = 400A, VGE = 0V IE = 400A die / dt = –800A / µs Junction to case, IGBT part (Per 1/2 module) Junction to case, FWDi part (Per 1/2 module) Case to fin, conductive grease applied (Per 1/2 module) IC = 40mA, VCE = 10V IC = 400A, VGE = 15V (Note 4) VCE = 10V VGE = 0V 5 0.5 4.16 — — — — — 1.00 2.00 2.00 1.00 3.77 1.20 — 0.036 0.072 — mA µA nF nF nF µC µs µs µs µs V µs µC K/W K/W K/W — — 3.20 3.60 40 4.4 1.3 1.8 — — — — 2.90 — 85 — — 0.016 — — — — — — — — — — — — — — — — — — 6.0 4.5 7.5 Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Contact thermal resistance Min Typ Max ICES IGES Cies Coes Cres QG td (on) tr td (off) tf VEC (Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R Rth(c-f) ELECTRICAL CHARACTERISTICS (Tj = 25 °C) Symbol Parameter Conditions VGE(th) VCE(sat) Limits Unit Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 2. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. 3. Junction temperature (Tj) should not increase beyond 150 °C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. Thermal resistance HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules |
Similar Part No. - CM400DY-50H |
|
Similar Description - CM400DY-50H |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |