Mar. 2003

MITSUBISHI HVIGBT MODULES

CM400DY-50H

HIGH POWER SWITCHING USE

INSULATED TYPE

HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)

°C

Pulse

(Note 1)

Pulse

(Note 1)

°C, IGBT part

—

—

Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.

Main terminals screw M8

Mounting screw M6

Auxiliary terminals screw M4

Typical value

2500

±20

400

800

400

800

3400

–40 ~ +150

–40 ~ +125

6000

6.67 ~ 13.00

2.84 ~ 6.00

0.88 ~ 2.00

1.5

V

V

A

A

A

A

W

°C

°C

V

N·m

N·m

N·m

kg

Collector-emitter voltage

Gate-emitter voltage

Maximum collector dissipation

Junction temperature

Storage temperature

Isolation voltage

Mounting torque

Mass

Collector current

Emitter current

Symbol

Item

Conditions

Unit

Ratings

—

—

V

V

°C

°C

Ω

Resistive load switching operation

die / dt = –800A /

µs

Junction to case, IGBT part (Per 1/2 module)

Junction to case, FWDi part (Per 1/2 module)

Case to fin, conductive grease applied (Per 1/2 module)

(Note 4)

5

0.5

4.16

—

—

—

—

—

1.00

2.00

2.00

1.00

3.77

1.20

—

0.036

0.072

—

mA

µA

nF

nF

nF

µC

µs

µs

µs

µs

V

µs

µC

K/W

K/W

K/W

—

—

3.20

3.60

40

4.4

1.3

1.8

—

—

—

—

2.90

—

85

—

—

0.016

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

6.0

4.5

7.5

Collector cutoff current

Gate-emitter

threshold voltage

Gate-leakage current

Collector-emitter

saturation voltage

Input capacitance

Output capacitance

Reverse transfer capacitance

Total gate charge

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Emitter-collector voltage

Reverse recovery time

Reverse recovery charge

Contact thermal resistance

Min

Typ

Max

(Note 2)

Symbol

Parameter

Conditions

Limits

Unit

°C.

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

Thermal resistance

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules