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UMA1020 Datasheet(PDF) 8 Page - NXP Semiconductors |
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UMA1020 Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 20 page 1995 Jun 15 8 Philips Semiconductors Product specification Low-voltage dual frequency synthesizer for radio telephones UMA1020M LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). HANDLING Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is desirable to take normal precautions appropriate to handling MOS devices. THERMAL CHARACTERISTICS SYMBOL PARAMETER MIN. MAX. UNIT VDD digital supply voltage −0.3 +5.5 V VCC analog supply voltage −0.3 +5.5 V ∆V CC −DD difference in voltage between VCC and VDD −0.3 +5.5 V Vn voltage at pins 1, 6, 8 to 15, 19 and 20 −0.3 VDD + 0.3 V V2, 3, 17 voltage at pins 2, 3 and 17 −0.3 VCC + 0.3 V ∆V GND difference in voltage between AGND and DGND (these pins should be connected together) −0.3 +0.3 V Ptot total power dissipation − 150 mW Tstg storage temperature −55 +125 °C Tamb operating ambient temperature −30 +85 °C Tj maximum junction temperature − 95 °C SYMBOL PARAMETER VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air 120 K/W |
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