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LM35D Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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LM35D Datasheet(HTML) 3 Page - National Semiconductor (TI) |
3 / 12 page Electrical Characteristics (Note 1) (Note 6) (Continued) LM35 LM35C LM35D Parameter Conditions Tested Design Tested Design Units Typical Limit Limit Typical Limit Limit (Max) (Note 4) (Note 5) (Note 4) (Note 5) Accuracy TAea25 C g 04 g 10 g 04 g 10 C LM35 LM35C TAeb10 C g 05 g 05 g 15 C (Note 7) TAeTMAX g 08 g 15 g 08 g 15 C TAeTMIN g 08 g 15 g 08 g 20 C Accuracy TAea25 C g 06 g 15 C LM35D TAeTMAX g 09 g 20 C (Note 7) TAeTMIN g 09 g 20 C Nonlinearity TMINsTAsTMAX g 03 g 05 g 02 g 05 C (Note 8) Sensor Gain TMINsTAsTMAX a 100 a 98 a 100 a 98 mV C (Average Slope) a 102 a 102 Load Regulation TAea25 C g 04 g 20 g 04 g 20 mVmA (Note 3) 0sILs1mA TMINsTAsTMAX g 05 g 50 g 05 g 50 mVmA Line Regulation TAea25 C g 001 g 01 g 001 g 01 mVV (Note 3) 4VsVSs30V g 002 g 02 g 002 g 02 mVV Quiescent Current VSea5V a25 C 5680 5680 m A (Note 9) VSea5V 105 158 91 138 m A VSea30V a25 C 562 82 562 82 m A VSea30V 1055 161 915 141 m A Change of 4VsVSs30V a25 C 02 20 02 20 m A Quiescent Current 4VsVSs30V 05 30 05 30 m A (Note 3) Temperature a 039 a 07 a 039 a 07 m A C Coefficient of Quiescent Current Minimum Temperature In circuit of a 15 a 20 a 15 a 20 C for Rated Accuracy Figure 1 ILe0 Long Term Stability TJeTMAX for g 008 g 008 C 1000 hours Note 3 Regulation is measured at constant junction temperature using pulse testing with a low duty cycle Changes in output due to heating effects can be computed by multiplying the internal dissipation by the thermal resistance Note 4 Tested Limits are guaranteed and 100% tested in production Note 5 Design Limits are guaranteed (but not 100% production tested) over the indicated temperature and supply voltage ranges These limits are not used to calculate outgoing quality levels Note 6 Specifications in boldface apply over the full rated temperature range Note 7 Accuracy is defined as the error between the output voltage and 10mv C times the device’s case temperature at specified conditions of voltage current and temperature (expressed in C) Note 8 Nonlinearity is defined as the deviation of the output-voltage-versus-temperature curve from the best-fit straight line over the device’s rated temperature range Note 9 Quiescent current is defined in the circuit of Figure 1 Note 10 Absolute Maximum Ratings indicate limits beyond which damage to the device may occur DC and AC electrical specifications do not apply when operating the device beyond its rated operating conditions See Note 1 Note 11 Human body model 100 pF discharged through a 15 kX resistor Note 12 See AN-450 ‘‘Surface Mounting Methods and Their Effect on Product Reliability’’ or the section titled ‘‘Surface Mount’’ found in a current National Semiconductor Linear Data Book for other methods of soldering surface mount devices 3 |
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