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M63805KP Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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M63805KP Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
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2 / 5 page  Jan. 2000 PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. M63805P M63805FP M63805KP MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63805P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY Duty Cycle no more than 50% Duty Cycle no more than 100% Duty Cycle no more than 30% Duty Cycle no more than 100% Duty Cycle no more than 12% Duty Cycle no more than 100% RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85 °C) V (BR) CEO VIN(on) hFE V V — 35 — — 13 50 — — — 19 — — 0.2 0.8 23 — Symbol Unit Parameter Test conditions Limits min typ max V Collector-emitter breakdown voltage “On” input voltage DC amplification factor ICEO = 10 µA IIN = 1mA, IC = 10mA IIN = 2mA, IC = 150mA IIN = 1mA, IC = 10mA VCE = 10V, IC = 10mA VCE(sat) Collector-emitter saturation voltage ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25 °C) VO V 0 0 0 0 0 0 0 0 — — — — — — — — 35 250 170 250 130 250 100 30 Symbol Unit Parameter Test conditions Limits min typ max Output voltage mA V IC VIN Input voltage Collector current (Current per 1 cir- cuit when 8 circuits are coming on si- multaneously) M63805P M63805FP M63805KP ns ns — — 140 240 — — Symbol Unit Parameter Test conditions Limits min typ max Turn-on time Turn-off time ton toff CL = 15pF (note 1) SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25 °C) Collector-emitter voltage Collector current Input voltage Power dissipation Operating temperature Storage temperature V mA V W °C °C –0.5 ~ +35 300 –0.5 ~ +35 1.79 1.10 0.68 –40 ~ +85 –55 ~ +125 Ratings Symbol Parameter Conditions Unit ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85 °C) Output, H Current per circuit output, L VCEO IC VI Pd Topr Tstg Ta = 25 °C, when mounted on board |
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