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M63814KP Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor |
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M63814KP Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor |
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4 / 5 page  Jan. 2000 PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63814P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE Duty Cycle-Collector Characteristics (M63814GP/KP) Duty cycle (%) Duty Cycle-Collector Characteristics (M63814GP/KP) Duty cycle (%) Output Saturation Voltage Collector Current Characteristics Output saturation voltage VCE(sat) (V) Output Saturation Voltage Collector Current Characteristics Output saturation voltage VCE(sat) (V) Output Saturation Voltage Collector Current Characteristics Output saturation voltage VCE(sat) (V) DC Amplification Factor Collector Current Characteristics Collector current Ic (mA) 400 300 200 100 0 0 100 20 40 60 80 1~2 4 5 6 7 3 400 300 200 100 0 0 100 20 40 60 80 1 2 3 4 56 7 250 200 150 100 50 0 0 0.2 0.4 0.6 0.8 100 80 60 40 20 0 0 0.05 0.10 0.15 0.20 100 80 60 40 20 0 0 0.05 0.10 0.15 0.20 100 101 102 101 102 103 23 5 7 2 3 5 7 2 3 5 7 2 3 5 7 103 23 5 7 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 25 °C •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 85 °C Ta = 25 °C IB = 3mA IB = 2mA IB = 1.5mA IB = 1mA IB = 0.5mA Ta = 25 °C VI = 28V VI = 24V VI = 20V VI = 16V VI = 12V VI = 8V II = 2mA Ta = –40 °C Ta = 25 °C Ta = 85 °C Ta = 25 °C VCE 10V |
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Similar Description - M63814KP |
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