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M63815KP Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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M63815KP Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor |
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3 / 5 page  Jan. 2000 PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. ton toff 50% 50% 50% 50% INPUT OUTPUT (1)Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10 µs, tr = 6ns, tf = 6ns, Zo = 50Ω, VIH = 18V (2)Input-output conditions : RL = 220 Ω, Vo = 35V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes PG 50 Ω RL OUTPUT INPUT Vo CL OPEN Measured device MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63815P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS TIMING DIAGRAM NOTE 1 TEST CIRCUIT Thermal Derating Factor Characteristics Ambient temperature Ta ( °C) Input Characteristics Input voltage VI (V) Duty Cycle-Collector Characteristics (M63815P) Duty cycle (%) Duty Cycle-Collector Characteristics (M63815P) Duty cycle (%) 2.0 1.5 1.0 0.5 0 0 25 50 75 100 85 0 100 20 40 60 80 400 300 200 100 0 6 7 8 1~5 400 300 200 100 0 0 100 20 40 60 80 1~3 4 5 6 7 8 M63815P M63815FP M63815KP 0.931 0.572 0.354 4 3 2 1 0 030 25 20 15 10 5 Ta = –40 °C Ta = 25 °C Ta = 85 °C •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 25 °C •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 85 °C |
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