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M63827WP Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

Part No. M63827WP
Description  7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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Feb. 2003
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63827WP/DP
7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85
°C)
V
V
VO
VIL
0
3.85
3.4
0
50
0.6
IC
VIH
0
0
400
200
25
mA
V
V
V
µA
ICEO = 100
µA
II = 500
µA, IC = 350mA
II = 350
µA, IC = 200mA
II = 250
µA, IC = 100mA
VI = 3.85V
IF = 350mA
VR = 50V
VCE = 2V, IC = 350mA
II
VCE (sat)
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
50
1000
1.2
1.0
0.9
0.9
1.4
3000
1.6
1.3
1.1
1.4
2.0
100
V
mA
ns
ns
20
400
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
PG
50
CL
Measured device
OPEN
VO
RL
INPUT
OUTPUT
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10
µs, tr = 6ns, tf = 6ns, ZO = 50Ω
VI = 3.85V
(2) Input-output conditions : RL = 25
Ω, VO = 10V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
ton
50%
50%
50%
50%
toff
INPUT
OUTPUT
Limits
min
typ
max
Unit
Parameter
Symbol
Duty Cycle
WP : no more than 8%
DP : no more than 5%
Duty Cycle
WP : no more thn 30%
DP : no more than 20%
“L” input voltage
“H” input voltage
Collector current
(Current per 1 cir-
cuit when 7 circuits
are coming on si-
multaneously)
Output voltage
IC
≤ 400mA
IC
≤ 200mA
Collector-emitter breakdown voltage
Clamping diode forward voltage
Clamping diode reverse current
DC amplification factor
V (BR) CEO
VF
IR
hFE
Collector-emitter saturation voltage
Input current
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25
°C)
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25
°C)
Turn-on time
Turn-off time
ton
toff
CL = 15pF (note 1)
Taiwan A’ssy product




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