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M63832KP Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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M63832KP Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
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2 / 4 page  Sep. 2001 PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63832GP/KP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY — — RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85 °C) V Parameter 2.7 Limits min typ max Symbol Unit VCC Supply voltage “H” input voltage “L” input voltage Collector current (Current per 1 circuit when 7 circuits are coming on simultaneously) IC 0 0 VCC-0.5 0 3.0 — — 3.6 400 200 VCC VCC-2.2 mA V V VIH VIL Duty Cycle GP/KP : no more than 2% Duty Cycle GP/KP : no more than 10% — 1.15 0.93 –220 2.6 10000 50 — — — — 2000 V (BR) CEO II ICC hFE V V µA mA — — 2.4 1.6 –600 4.0 — Symbol Unit Parameter Test conditions Limits min typ max Collector-emitter breakdown voltage Input current Supply current (AN only Input) DC amplification factor ICEO = 100 µA VCC = 2.7V, VI = 0.5V, IC = 400mA VCC = 2.7V, VI = 0.5V, IC = 200mA VI = VCC-2.2V VCC = 3.6V, VI = 0.5V VCC = 2.7V, VCE = 2V, IC = 0.35A, Ta = 25 °C VCE(sat) Collector-emitter saturation voltage ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –40 ~ +85 °C) ✽ : Typical values are at Ta = 25°C ns ns — — 120 4500 — — Symbol Unit Parameter Test conditions Limits min typ max Turn-on time Turn-off time ton toff CL = 15pF (note 1) SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25 °C) TIMING DIAGRAM NOTE 1 TEST CIRCUIT INPUT 50% 50% 50% 50% OUTPUT ton toff PG VCC VO RL CL 50 Ω INPUT OUTPUT (1)Pulse generator (PG) characteristics : PRR=1kHz, tw = 10 µs, tr = 6ns, tf = 6ns, Zo = 50Ω VI = 0.5 ~ 2.7V (2)Input-output conditions : RL = 30 Ω, Vo = 10V, Vcc = 2.7V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Measured device ✽ |
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