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MG800J1US52A Datasheet(PDF) 5 Page - Mitsubishi Electric Semiconductor |
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MG800J1US52A Datasheet(HTML) 5 Page - Mitsubishi Electric Semiconductor |
5 / 7 page Dec.2005 MITSUBISHI IGBT MODULES MG800J1US52A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS PERFORMANCE CURVES 1600 1200 400 800 0 02 3 4 5 1 1600 1200 800 400 0 02 5 4 3 1 10 8 6 4 2 0 20 048 12 16 9 10 15 10 8 6 4 2 0 20 04 8 12 16 1600 1200 400 800 0 04 6 8 10 12 14 2 1600 1200 400 800 0 02 3 4 5 1 10 9 12 15 VGE = 20V VGE = 20V 12 IC = 400A 800A 1600A Tj = 25°C 125°C Tj = 25°C 125°C IC = 400A 800A 1600A IC - VCE COLLECTOR-EMITTER VOLTAGE VCE (V) IC - VCE COLLECTOR-EMITTER VOLTAGE VCE (V) VCE - VGE GATE-EMITTER VOLTAGE VGE (V) GATE-EMITTER VOLTAGE VGE (V) VCE - VGE IC - VGE GATE-EMITTER VOLTAGE VGE (V) IF - VF FORWARD VOLTAGE VF (V) Common emitter Tj = 25°C Common emitter Tj = 125°C Common emitter Tj = 25°C Common emitter Tj = 125°C Common emitter VCE = 5V Common cathode VGE = 0 |
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