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IDT74SSTUBF32869ABKGT Datasheet(PDF) 9 Page - Integrated Device Technology |
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IDT74SSTUBF32869ABKGT Datasheet(HTML) 9 Page - Integrated Device Technology |
9 / 22 page IDT74SSTUBF32869A 14-BIT CONFIGURABLE REGISTERED BUFFER FOR DDR2 COMMERCIAL TEMPERATURE GRADE 14-BIT CONFIGURABLE REGISTERED BUFFER FOR DDR2 9 IDT74SSTUBF32869A 7093/8 CONFIDENTIAL Absolute Maximum Ratings Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Mode Select Output Buffer Characteristics Output edge rates over recommended operating free-air temperature range Item Rating Supply Voltage, VDD -0.5V to 2.5V Input Voltage Range, VI1 1 The input and output negative voltage ratings may be exceeded if the ratings of the I/P and O/P clamp current are observed. -0.5V to VDD + 2.5V Output Voltage Range, VO1,2 2 This current will flow only when the output is in the high state level VO > VDDQ. -0.5V to VDDQ + 0.5V Input Clamp Current, IIK ±50mA Output Clamp Current, IOK ±50mA Continuous Output Clamp Current, IO ±50mA Continuous Current through each VDD or GND ±100mA Package Thermal Impedance ( θja)3 3 The package thermal impedance is calculated in accordance with JESD 51. 0m/s Airflow 40 °C/W 1m/s Airflow 29 °C/W Storage Temperature -65 to +150 °C C1 Device Mode 0 First device in pair, Front 1 Second device in pair, Back Parameter VDD = 1.8V ± 0.1V Units Min. Max. dV/dt_r 1 4 V/ns dV/dt_f 1 4 V/ns dV/dt_ Δ1 1 Difference between dV/dt_r (rising edge rate) and dV/dt_f (falling edge rate). 1V/ns |
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