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P3C1041-10JC Datasheet(PDF) 3 Page - Pyramid Semiconductor Corporation |
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P3C1041-10JC Datasheet(HTML) 3 Page - Pyramid Semiconductor Corporation |
3 / 10 page P3C1041 Page 3 of 10 Document # SRAM130 REV OR *V CC = 3.6V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = VIL, OE = VIH. I CC Symbol Parameter Temperature Range Dynamic Operating Current* Commercial Industrial N/A –12 –10 –15 –20 Unit mA mA POWER DISSIPATION CHARACTERISTICS VS. SPEED 90 85 95 80 90 75 85 AC ELECTRICAL CHARACTERISTICS—READ CYCLE (V CC = 3.3V ± 0.3V, All Temperature Ranges) (2) Sym. t RC t AA t AC t OH t LZ t HZ t OE t OLZ t OHZ t PU t PD Parameter Read Cycle Time Address Access Time Chip Enable Access Time Output Hold from Address Change Chip Enable to Output in Low Z Chip Disable to Output in High Z Output Enable Low to Low Z Output Enable High to High Z Chip Enable to Power Up Time Chip Disable to Power Down Time Output Enable Low to Data Valid Max Min Max Min Max Min Max Min -10 -12 -15 -20 Unit 10 3 3 0 0 10 10 5 5 5 10 12 3 3 0 0 12 12 6 6 6 12 15 3 3 0 0 15 15 7 7 7 15 20 3 3 0 0 20 20 8 8 8 20 ns ns ns ns ns ns ns ns ns ns ns t BE Byte Enable to Data Valid 5 6 7 8ns t LZBE Byte Enable to Low Z 0 00 0 ns t HZBE Byte Disable to High Z 6 6 7 8ns |
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